Current Issue : April-June Volume : 2025 Issue Number : 2 Articles : 5 Articles
This paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. The sensor’s area is 32 μm2 per unit, enabling dense integration around thermal hotspots. A novel voltage calibration method ensures accurate temperature extraction. The measurement results demonstrate three-sigma errors within ±0.1 ◦C in the critical range of 75 ◦C to 95 ◦C and +1.29/−1.08 ◦C outside this range, confirming the sensor’s high accuracy and suitability for advanced thermal management applications....
This paper demonstrates the use of organic thin-film transistors (OTFTs) to drive active digital mini light-emi9ing diode (mini-LED) backlights, aiming to achieve exceptional display performance. Our findings reveal that OTFTs can effectively power mini- LED backlights, reaching brightness levels exceeding 100,000 nits. This approach not only enhances image quality but also improves energy efficiency. OTFTs offer a flexible and lightweight alternative to conventional silicon-based transistors, enabling innovative and versatile display designs. The integration of mini-LED technology with OTFTs produces displays with superior contrast ratios, enhanced color brightness, and lower power consumption. This technological advancement is poised to revolutionize high-dynamic-range (HDR) displays, including those in televisions, smartphones, and wearable devices, where the demand for high brightness and energy efficiency is paramount....
In this paper, a high energy 3.5 μm mid-infrared (MIR) burst-mode KTA optical parametric oscillator (OPO) was demonstrated. Utilizing a quasi-continuous wave (QCW) laser diode (LD) side-pump module and electro-optic (EO) Q-switching technique, a high beam quality 1064 nm burst-mode laser was achieved as the fundamental source, generating 30 mJ high-energy pulses at burst repetition rates of 100 Hz and 200 Hz with sub-burst repetition rates of 20 kHz, 40 kHz, and 50 kHz. The KTA-OPO produced a 3.5 μm MIR burst-mode laser output with 4 to 11 sub-pulses per pulse envelope. The output energies were 2.9 mJ, 2.81 mJ, and 2.79 mJ at 100 Hz, as well as 2.8 mJ, 2.75 mJ, and 2.72 mJ at 200 Hz, with corresponding conversion efficiencies of 9.6%, 9.3%, and 9.3% at 100 Hz, as well as 9.3%, 9.2%, and 9.1% at 200 Hz, respectively. Our results pave a new way for generating burst-mode MIR lasers....
We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power)....
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations. This paper introduces a new physicsbased analytical model to elucidate the behavior of electric field and potential in the mesa region of a TMBS rectifier in reverse bias. Our model leverages the concept of shared charge between the Schottky and MOS junctions, capturing how electric field distribution is altered in response to trench geometry and bias conditions. This shared charge approach not only simplifies the analysis of electric field distribution but also reveals key design parameters, such as trench depth, oxide thickness, and doping concentration, that influence device performance. This model employs the concept of shared charge between the vertical Schottky and MOS junction. Additionally, it provides a detailed view of the electric field suppression mechanism in the TMBS device, highlighting the significant effects of the inversion charge on the MOS interface. By comparing our analytical results with TCAD simulations, we demonstrate strong agreement, underscoring the model’s accuracy and its potential to serve as a more accessible alternative to resource-intensive simulations. This work contributes to a valuable tool for TMBS device design, offering insights into electric field management that support high-efficiency, high-voltage applications, including power supplies, automotive electronics, and renewable energy systems....
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